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06/24/11 irfh5010pbf hexfet power mosfet notes through are on page 8 features and benefits www.irf.com 1 features benefits pqfn 5x6 mm applications ? secondary side synchronous rectification ? inverters for dc motors ? dc-dc brick applications note form quantity IRFH5010TRPBF pqfn 5mm x 6mm tape and reel 4000 irfh5010tr2pbf pqfn 5mm x 6mm tape and reel 400 orderable part number package type standard pack low rdson (< 9 m ) lower conduction losses low thermal resistance to pcb (<0.5c/w) increased power density 100% rg tested increased reliability low profile (<0.9 mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, industrial qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.029 250 max. 1370 400 20 100 11 100 v w a c v ds 100 v r ds(on) max (@v gs = 10v) 9.0 m q g (typical) 67 nc r g (typical) 1.2 i d (@t c(bottom) = 25c) 100 a
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2 www.irf.com thermal resistance parameter typ. max. units r jc (bottom) junction-to-case CCC 0.5 r jc (top) junction-to-case CCC 15 c/w r ja junction-to-ambient CCC 35 r ja (<10s) junction-to-ambient CCC 22 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 100 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.11 CCC v/c r ds(on) static drain-to-source on-resistance CCC 7.5 9.0 m v gs(th) gate threshold voltage 2.0 CCC 4.0 v ? v gs(th) gate threshold voltage coefficient CCC -8.3 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 206 CCC CCC s q g total gate charge CCC 67 101 q gs1 pre-vth gate-to-source charge CCC 12 CCC q gs2 post-vth gate-to-source charge CCC 5.3 CCC q gd gate-to-drain charge CCC 18 CCC q godr gate charge overdrive CCC 32 CCC q sw switch charge (q gs2 + q gd ) CCC 23.3 CCC q oss output charge CCC 18 CCC nc r g gate resistance CCC 1.2 CCC t d(on) turn-on delay time CCC 9 CCC t r rise time CCC 12 CCC t d(off) turn-off delay time CCC 27 CCC t f fall time CCC 8.6 CCC c iss input capacitance CCC 4340 CCC c oss output capacitance CCC 425 CCC c rss reverse transfer capacitance CCC 162 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 34 51 ns q rr reverse recovery charge CCC 256 384 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 50v CCC v gs = 20v v gs = -20v CCC CCC 400 CCC CCC 100 conditions v gs = 0v, i d = 250ua reference to 25c, i d = 1.0ma v gs = 10v, i d = 50a conditions max. 227 50 ? = 1.0mhz t j = 25c, i f = 50a, v dd = 50v di/dt = 500a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. CCC r g =1.3 v ds = 25v, i d = 50a v ds = 100v, v gs = 0v, t j = 125c a i d = 50a i d = 50a v gs = 0v v ds = 25v v ds = v gs , i d = 150 a v gs = 10v typ. v ds = 100v, v gs = 0v v ds = 16v, v gs = 0v v dd = 50v, v gs = 10v downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.00v 5.00v 4.50v 4.25v 4.00v bottom 3.75v 60 s pulse width tj = 25c 3.75v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.75v 60 s pulse width tj = 150c vgs top 15v 10v 7.00v 5.00v 4.50v 4.25v 4.00v bottom 3.75v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 50a downloaded from: http:///

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a id = 1.0ma id = 500 a id = 150 a 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 120 i d , d r a i n c u r r e n t ( a ) limited by package 0.10 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec downloaded from: http:///

www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 50a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.4a 11.6a bottom 50a downloaded from: http:///

6 www.irf.com fig 16. for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s downloaded from: http:///

www.irf.com 7 pqfn 5x6 outline "b" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) downloaded from: http:///

8 www.irf.com qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.181mh, r g = 50 , i as = 50a. pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability ir world headquarters: 101n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/2011 data and specifications subject to change without notice. ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) pqfn 5x6 outline "b" tape and reel downloaded from: http:///

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